SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To reduce leakage current.SOLUTION: A semiconductor device includes: an oxide layer; a source electrode layer in contact with the oxide layer; a first drain electrode layer in contact with the oxide layer; a second drain electrode layer in contact with the oxide layer; a gate insulating film in contact with the oxide layer; a first gate electrode layer overlapped with the source electrode layer and the first drain electrode layer and overlapped with an upper surface of the oxide layer with the gate insulating film interposed therebetween; a second gate electrode layer overlapped with the source electrode layer and the second drain electrode layer and overlapped with the upper layer of the oxide layer with the gate insulating film interposed therebetween; and a third gate electrode layer overlapped with a side surface of the oxide layer with the gate insulating film interposed therebetween.