| 摘要 |
<p>PROBLEM TO BE SOLVED: To reduce an influence of thermal expansion of each member for composing a semiconductor module against a pressure contact force exerted on each member for composing the semiconductor module.SOLUTION: A semiconductor module 1 comprises a switching element 2, a diode 3, a source electrode 4, a drain electrode 5 and a housing 6. The source electrode 4 has a source internal electrode 4a and a source external electrode 4b. The source internal electrode 4a and the source external electrode 4b are arranged apart from each other, and a connection conductor 13 is provided between the source internal electrode 4a and the source external electrode 4b. The connection conductor 13 is a conductor composed of the same material as those of the source internal electrode 4a and the source external electrode 4b, or a conductor having a thermal expansion coefficient similar to those of the source internal electrode 4a and the source external electrode 4b, and formed in a wire shape or a ribbon shape. Junction between the connection conductor 13 and the source internal electrode 4a (or junction between the connection conductor 13 and the source external electrode 4b) is performed by ultrasonic junction, resistance junction and the like.</p> |
