| 摘要 |
According to one embodiment, in a semiconductor device, a first semiconductor layer of a first conductivity type has a first impurity concentration. A second semiconductor layer of the first conductivity type is formed on the first semiconductor layer and has a second impurity concentration lower than the first impurity concentration. A field plate electrode is formed in a lower portion of a trench formed in the second semiconductor layer through a first insulating film so as to bury the lower portion of the trench. A second insulating film is formed in the upper portion of the trench so as to be in contact with the top surface of the field plate electrode. A gate electrode is formed in the upper portion of the trench through a gate insulating film so as to bury the upper portion of the trench to sandwich the second insulating film. |
