SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

Characteristics of a semiconductor device are improved. A semiconductor device has a laminated insulating film formed above a lower-layer inductor. This laminated insulating film includes a first polyimide film, and a second polyimide film formed on the first polyimide film and having a second step between the first polyimide film and the second polyimide film. An upper-layer inductor is formed on the laminated insulating film. Since such a laminated structure of the first and second polyimide films is adopted, the film thickness of the insulating film between the lower-layer and upper-layer inductors can be increased, so that withstand voltage can be improved. Further, the occurrence of a depression or peeling-off due to defective exposure can be reduced, and step disconnection of a Cu (copper) seed layer or a plating defect due to the step disconnection can also be reduced.

主权项

1. A semiconductor device comprising:
a semiconductor substrate having a main surface; a first insulating film formed on the main surface; a first coil formed on the first insulating film; a second insulating film formed on the first coil and having a first main surface and first side surfaces continuous with the first main surface; a third insulating film formed on the first main surface of the second insulating film and having a second main surface and second side surfaces continuous with the second main surface; and a second coil formed on the second main surface of the third insulating film, wherein the second insulating film and the third insulating film are formed as a laminated insulating film together, having a first step formed by the first main surface and the second main surface via the second side surfaces.