| 发明名称 |
DIFFUSIONLESS TRANSFORMATIONS IN MTJ STACKS |
| 摘要 |
A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a plurality of magnetic layers including a nonmagnetic spacer layer. The magnetic junction also includes at least one diffusionless transformation layer. The magnetic junction is configured to be switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. |
| 申请公布号 |
US2014175578(A1) |
申请公布日期 |
2014.06.26 |
| 申请号 |
US201313839672 |
申请日期 |
2013.03.15 |
| 申请人 |
Samsung Electronics Co., LTD. |
发明人 |
Chan Keith;Khvalkovskiy Alexey Vasilyevitch;Apalkov Dmytro |
| 分类号 |
H01L43/02 |
主分类号 |
H01L43/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A magnetic junction for use in a magnetic device comprising:
a nonmagnetic spacer layer; and at least one diffusionless transformation layer; wherein the magnetic junction is configured to be switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. |
| 地址 |
Gyeonggi-do KR |
