| 摘要 |
The device includes a wafer substrate including an isolation feature, a fin base embedded in the isolation feature, at least one channel disposed above the fin base, and a gate stack disposed around the channel, wherein the gate stack includes a top portion and a bottom portion of the gate stack formed by filling a cavity around the channel such that the top portion and bottom portion are aligned each other. The device further includes at least one source and one drain disposed over the fin base, wherein the channel connects the source and the drain. The device further includes the source and the drain disposed over a fin insulator disposed over the fin base. |
