| 发明名称 |
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure comprises a first doped region, a second doped region, and a gate structure. The first doped region has a first type conductivity. The second doped region is formed in the first doped region and has a second type conductivity opposite to the first type conductivity. The gate structure is formed on the first doped region and the second doped region. The gate structure comprises a first gate portion and a second gate portion, which are separated from each other by a gap. |
| 申请公布号 |
US2014175560(A1) |
申请公布日期 |
2014.06.26 |
| 申请号 |
US201213723272 |
申请日期 |
2012.12.21 |
| 申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
Chan Ching-Lin;Lin Chen-Yuan;Lin Cheng-Chi;Lien Shih-Chin |
| 分类号 |
H01L27/088;H01L21/02 |
主分类号 |
H01L27/088 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor structure, comprising:
a first doped region having a first type conductivity; a second doped region formed in the first doped region and having a second type conductivity opposite to the first type conductivity; a gate structure formed on the first doped region and the second doped region, comprising a first gate portion and a second gate portion separated from each other by a gap; and a dielectric layer formed on the gate structure and in direct contact with the first doped region and the second doped region through the gap. |
| 地址 |
Hsinchu TW |
