SEMICONDUCTOR DEVICE HAVING INSULATING FILM WITH DIFFERENT STRESS LEVELS IN ADJACENT REGIONS AND MANUFACTURING METHOD THEREOF

摘要

An n-channel MISFETQn is formed in an nMIS first formation region of a semiconductor substrate and a p-channel MISFETQp is formed in an adjacent pMIS second formation region of the semiconductor substrate. A silicon nitride film having a tensile stress is formed to cover the n-channel MISFETQn and the p-channel MISFETQp. In one embodiment, the silicon nitride film in the nMIS formation region and the pMIS formation region is irradiated with ultraviolet rays. Thereafter, a mask layer is formed to cover the silicon nitride film in the nMIS formation region and to expose the silicon nitride film in the pMIS formation region. The silicon nitride film in the pMIS formation region is then subjected to plasma processing, which relieves the tensile stress of the silicon nitride film in the pMIS formation region.

主权项

1. A semiconductor device having a silicon nitride film with a different tensile stress in adjacent regions thereof, comprising:
a semiconductor substrate; an n-channel type first MISFET formed in a first region of the semiconductor substrate; a p-channel type second MISFET formed in an adjacent second region of the semiconductor substrate; a first insulating film formed over the semiconductor substrate so as to cover the first and second MISFETs; and an interlayer insulating film formed over the first insulating film, wherein the first insulating film is comprised of silicon nitride and serves as a tensile stress film, wherein a hydrogen content of the first insulating film in the first region is substantially equal to that of the first insulating film in the second region, and wherein a tensile stress of the first insulating film in the first region is at least twice as large as that of the first insulating film in the second region.