RADIATION ENHANCED RESISTIVE SWITCHING LAYERS

摘要

Provided are radiation enhanced resistive switching layers, resistive random access memory (ReRAM) cells including these layers, as well as methods of forming these layers and cells. Radiation creates defects in resistive switching materials that allow forming and breaking conductive paths in these materials thereby improving their resistive switching characteristics. For example, ionizing radiation may break chemical bonds in various materials used for such a layer, while non-ionizing radiation may form electronic traps. Radiation power, dozing, and other processing characteristics can be controlled to generate a distribution of defects within the resistive switching layer. For example, an uneven distribution of defects through the thickness of a layer may help with lowering switching voltages and/or currents. Radiation may be performed before or after thermal annealing, which may be used to control distribution of radiation created defects and other types of defects in resistive switching layers.

主权项

1. A method of forming a resistive random access memory cell, the method comprising:
providing a substrate comprising a first electrode layer, the first electrode layer comprising a first electrode material; forming a layer of a resistive switching material over the first electrode layer; irradiating the layer of the resistive switching material and forming a second electrode layer over the layer of the resistive switching material after the irradiating; wherein the irradiating forms defects within the layer and improves resistive switching of the layer.