发明名称 |
SEMICONDUCTOR DEVICES WITH GERMANIUM-RICH ACTIVE LAYERS & DOPED TRANSITION LAYERS |
摘要 |
Semiconductor device stacks and devices made there from having Ge-rich device layers. A Ge-rich device layer is disposed above a substrate, with a p-type doped Ge etch suppression layer (e.g., p-type SiGe) disposed there between to suppress etch of the Ge-rich device layer during removal of a sacrificial semiconductor layer richer in Si than the device layer. Rates of dissolution of Ge in wet etchants, such as aqueous hydroxide chemistries, may be dramatically decreased with the introduction of a buried p-type doped semiconductor layer into a semiconductor film stack, improving selectivity of etchant to the Ge-rich device layers. |
申请公布号 |
WO2014098975(A1) |
申请公布日期 |
2014.06.26 |
申请号 |
WO2013US45979 |
申请日期 |
2013.06.14 |
申请人 |
INTEL CORPORATION |
发明人 |
RACHMADY, WILLY;LE, VAN H.;PILLARISETTY, RAVI;KACHIAN, JESSICA S.;FRENCH, MARC C.;BUDREVICH, AARON A. |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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