COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM HAVING CYCLIC DIESTER GROUP

摘要

[Problem] To provide a resist underlayer film which can be used as a hard mask. [Solution] A resist underlayer film-forming composition for lithography, which contains, as silanes, hydrolyzable silanes, hydrolysis products thereof or hydrolysis-condensation products thereof, and wherein the hydrolyzable silanes include a hydrolyzable silane represented by formula (1) or a combination of a hydrolyzable silane represented by formula (1) and a hydrolyzable silane represented by formula (2), with the hydrolyzable silane represented by formula (1) or the combination of a hydrolyzable silane represented by formula (1) and a hydrolyzable silane represented by formula (2) being contained in an amount of less than 50% by mole of all the silanes. R1 aR2 bSi(R3)4-(a+b) formula (1) (In formula (1), R1 represents an organic group containing a moiety represented by formula (1-1), formula (1-2) or formula (1-3); a represents an integer of 1; b represents an integer of 0 or 1; and (a + b) represents an integer of 1 or 2.) R4 aR5 bSi(R6)4-(a+b) formula (2) (In formula (2), R4 represents an organic group containing a moiety represented by formula (2-1), formula (2-2) or formula (2-3); a represents an integer of 1; b represents an integer of 0 or 1; and (a + b) represents an integer of 1 or 2.)