| 摘要 |
The invention relates to a semiconductor laser light source having an edge-emitting semiconductor body (10). The semiconductor body (10) contains a semiconductor layer stack (110) having an n-type layer (111), an active layer (112) and a p-type layer (113), said layer stack being designed to generate electromagnetic radiation comprising a coherent fraction (21). The semiconductor laser light source is designed to decouple the coherent fraction (21) of the electromagnetic radiation from a decoupling surface (101) of the semiconductor body (10), said decoupling surface being inclined towards the active layer (112). The semiconductor body (10) has a further external surface (102A, 102B, 102C) inclined towards the decoupling surface (101) and has at least one light-diffusing sub-region (12, 12A, 12B, 12C, 120A, 120B) that is provided in order to direct a portion of the electromagnetic radiation generated by the semiconductor layer stack (110) towards the further external surface (102A, 102B, 102C). |
