| 摘要 |
<p>Provided is a method of forming a dummy gate in manufacturing a field effect transistor. The method of forming a dummy gate includes (a) a first process of exposing a workpiece having a polycrystalline silicon layer to plasma of HBr gas, wherein the polycrystalline silicon layer is etched to form a dummy semiconductor part having a pair of side surfaces in the polycrystalline silicon layer, and a protection film is formed based on a by-product of etching on the pair of side surfaces in such a manner that the thickness of the protection film becomes smaller toward a lower end of the dummy semiconductor part; and (b) a second process of further exposing the workpiece to the plasma of HBr gas after the first process.</p> |
