GRAPHENE MULTIPLE-VALUED LOGIC DEVICE, OPERATION METHOD THEREOF, AND FABRICATION METHOD THEREOF

摘要

A graphene multiple-valued logic device and a fabrication method thereof are disclosed. The graphene multiple-valued logic device includes a substrate, a graphene channel layer disposed on the substrate, source and drain electrodes disposed at both ends of the graphene channel layer, respectively, an insulator film formed on the graphene channel layer; and at least two gate electrodes disposed on the insulator film with a predetermined gap defined therebetween. The device allows adjustment of conductivity and resistance of the graphene channel layer depending on a gate voltage, whereby electric current flowing in the device can be variously changed when applied to a multiple-valued logic system.

主权项

1. A graphene multiple-valued logic device comprising:
a substrate; a graphene channel layer disposed on the substrate; source and drain electrodes disposed at both ends of the graphene channel layer, respectively; an insulator film formed on the graphene channel layer; and at least two gate electrodes disposed on the insulator film with a predetermined gap defined therebetween.