| 摘要 |
An electronic switching system and device comprising driver circuits for power transistors are disclosed, with particular application for MOSFET driven, normally-on gallium nitride (GaN) power transistors. Preferably, a low power, high speed CMOS driver circuit with an integrated low voltage, lateral MOSFET driver is series coupled, in a hybrid cascode arrangement, to a high voltage GaN HEMT and provides for improved control of noise and voltage transients. Monitoring and control functions, including latching and clamping, are based on monitoring of Vcc conditions for shut-down and start-up conditioning to enable safer operation, particularly for high voltage and high current switching. Preferred embodiments also provide isolated, self-powered, high speed driver devices, with reduced input losses. |
