| 摘要 |
<p>Methods for forming graphite-based structures (302, 304), in which a substrate is patterned to form a plurality of elements (104, 208) on the substrate (102), are provided. A trench separates a first element from an adjacent element in the plurality. The surface of the first element and the surface of the trench (i) are respectively characterized by different first and second elevations and (ii) are separated by a side wall of the first element. Orthogonal projections of the surface of the first element and the surface of the trench onto a common plane are contiguous or overlapping. In the method, a first graphene layer (302) on the entire first surface and a second graphene layer (304) on the entire second surface are concurrently generated. The second graphene layer has a thickness that is less than a difference between the first and second elevations. Thus, a graphite-based structure having isolated first and second graphene layers is formed. The first and second graphene layers may be doped to the same or to the opposite conductivity type and may also comprise pn junctions.</p> |
