| 摘要 |
<p>Provided is a method for utilizing atomic layer deposition (ALD) to prepare a thin film, the method comprising: identifying, via a precursor source and a temperature control database, whether the precursor source is a suitable precursor source for both ALD and chemical vapor deposition (CVD), and controlling the temperature of a reaction chamber and a sample according to the identified precursor source. The present invention can inhibit a parasitic CVD reaction in the entire reaction chamber while ensuring the vacuum degree of the chamber, thus the substrate of a prepared film is at the optimum temperature required for ALD, and can fully adsorb the required precursor source while desorbing a byproduct required to be removed, thereby preparing high quality thin film material.</p> |
