| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve productivity when manufacturing a pixel comprising a thin-film transistor using an oxide semiconductor.SOLUTION: A semiconductor device comprises: a first wiring functioning as a gate electrode formed on a substrate; a gate insulating film formed on the first wiring; a second wiring, on the gate insulating film, formed by stacking a low-resistance oxide semiconductor layer and a conductive layer on the low-resistance oxide semiconductor layer; an electrode layer formed by stacking the low-resistance oxide semiconductor layer and the conductive layer so that a region functioning as a pixel electrode of the low-resistance oxide semiconductor layer may be exposed; and a high-resistance oxide semiconductor layer formed between the second wiring on the gate insulating film and the electrode layer.</p> |
