SELF-RECTIFYING RRAM CELL STRUCTURE AND CROSSBAR ARRAY ARCHITECTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a self-rectifying RRAM cell structure and a crossbar array architecture thereof.SOLUTION: The self-rectifying RRAM cell structure includes: a first electrode layer formed of a first metal element; a second electrode layer formed of a second metal element of which the kind or the quality of material is different from that of the first metal element; and a first resistive-switching layer and a second resistive-switching layer sandwiched between the first electrode layer and the second electrode layer. The first resistive-switching layer and the second resistive-switching layer form an ohmic contact, and the first resistive-switching layer has a first bandgap lower than a second bandgap of the second resistive-switching layer.