METHOD FOR PRODUCING HIGHER SILANES WITH IMPROVED YIELD

摘要

The invention relates to a method for producing hexachlorodisilane or Ge2CI6, which is characterized in that, in a gas containing SiCI4 or GeCI4, a) a non-thermal plasma is generated by means of an alternating voltage of the frequency f, and wherein at least one electromagnetic pulse having the repetition rate g is coupled into the plasma, the voltage component of which pulse has an edge steepness in the rising edge of 10 V ns-1 to 1 kV ns-1 and a pulse width b of 500 ns to 100 μs, wherein a liquid phase is obtained, and b) pure hexachlorodisilane or Ge2Cl6 is obtained from the liquid phase.

主权项

1. Process A process for preparing hexachlorodisilane or Ge2Cl6,
the process comprising: in a gas comprising SiCl4 or GeCl4,
a) activating a nonthermal plasma is generated in a reactor via an AC voltage of frequency f, and injecting into the plasma at least one electromagnetic pulse with
repetition rate g,a voltage component having an edge slope in a rising edge of from 10 V ns−1 to 1 kV ns−1, anda pulsewidth b of from 500 ns to 100 μs,thereby obtaining a liquid phase, andb) obtaining pure hexachlorodisilane or Ge2Cl6 is obtained from the liquid phase.