发明名称 EPITAXIAL WAFER MANUFACTURING APPARATUS
摘要 The present invention relates to an epitaxial wafer manufacturing apparatus which can improve an air-cooling performance in a step of loading a wafer before an epilayer is formed. The present invention comprises a cabinet having an exhaust hole; a chamber which is formed in the cabinet and receives reaction gas for forming the epilayer; a susceptor which is formed in the chamber and on which the wafer is mounted; lamps which are formed in the chamber and heat the reaction gas; a heat exchanger which is formed on one side of the cabinet and cools a fluid passing through the chamber; a blower which is formed on one side of the heat exchanger and blasts air to allow the fluid to pass through the heat exchanger; and a muffler which is connected from the outlet of the blower to the upper part of the chamber and intensively injects the fluid cooled by the heat exchanger to the lamps. The muffler provides an epitaxial wafer manufacturing apparatus which has separate outlets according to the arrangement of the lamps.
申请公布号 KR20140079100(A) 申请公布日期 2014.06.26
申请号 KR20120148694 申请日期 2012.12.18
申请人 LG SILTRON INCORPORATED 发明人 KIM, SIN YOUNG
分类号 H01L21/20;H01L21/02 主分类号 H01L21/20
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