| 摘要 |
A write voltage generation circuit and a write voltage generation method of the same are provided to shorten a time required for a read operation by starting a write operation before a saturated output voltage of each of charge pumps approach a final target value in a write operation of a non-volatile memory cell. A write voltage generation circuit(50-1) includes a voltage generating unit(10), a voltage sensing unit(20-1), and a switch unit(30). The voltage sensing unit controls the switch unit to provide a voltage for a program operation of a non-volatile memory cell to the non-volatile memory cell by generating a control signal when a bit line voltage(VPB_CP) for program generated by a charge pump of the voltage generating unit approaches a programmable voltage level in a program mode of a write operation of the non-volatile memory cell. |
