SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor memory device having diode characteristics.SOLUTION: A semiconductor memory device 100 according to the present embodiment comprises: an n-type first semiconductor layer 10; an electron capture layer 20 formed on the first semiconductor layer 10, for capturing electrons; a p-type second semiconductor layer 30 formed on the electron capture layer 20; a first electrode 40 electrically connected with the first semiconductor layer 10; and a second electrode 50 electrically connected with the second semiconductor layer 30. The electron capture layer 20 is a layer containing carbon and silicon and a layer for capturing and discharging electrons at an interface with the second semiconductor layer 30 by application of a voltage to between the first electrode 40 and the second electrode 50.