| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which achieves low thermal resistance and high density at the same time, and has excellent heat resistance; and provide a manufacturing method of the semiconductor device.SOLUTION: A semiconductor device comprises: a substrate which has a plurality of external terminals on a rear face and a plurality of bonding terminals electrically connected with the plurality of external terminals on a surface; a semiconductor chip which is mounted on the surface of the substrate and has a plurality of bonding pads on a surface; a plurality of bonding wires for connecting between the plurality of bonding pads or connecting the plurality of bonding terminals with the plurality of bonding pads; a first encapsulation layer for encapsulating the surface of the substrate, the plurality of bonding wires and the semiconductor chip; and a second encapsulation layer which is formed on the first encapsulation layer and has thermal conductivity higher than that of the first encapsulation layer. |
