| 摘要 |
PROBLEM TO BE SOLVED: To provide a stably-usable IGZO flat plate type sputtering target having excellent yield in production, and not generating a crack even when being used in high output, because a target material has no residual stress strain, concerning a flat plate type sputtering target, and to provide a production method thereof.SOLUTION: Since an IGZO flat plate type sputtering target having no residual stress strain inside a target material becomes producible by subjecting the target material after being sintered before being ground to anneal heating, and thereby the IGZO flat plate type sputtering target having excellent yield in production, and not generating a crack even when being used in high output can be obtained. |
