发明名称 LIGHT EMITTING DIODE WITH ENHANCED LIGHT EXTRACTION
摘要 A light-emitting diode includes a substrate, a stacked semiconductor structure on one side of the substrate, and a reflection layer on the other side of the substrate opposite to the stacked semiconductor structure. At least one contact electrode is disposed on the stacked semiconductor structure. The contact electrode includes a pad electrode and at least one finger electrode extending from the pad electrode. A light-guiding structure is disposed along the finger electrode.
申请公布号 US2014175485(A1) 申请公布日期 2014.06.26
申请号 US201314016236 申请日期 2013.09.03
申请人 Formosa Epitaxy Incorporation 发明人 Liao Keng-Ying;Liu Yu-Hsuan
分类号 H01L33/58 主分类号 H01L33/58
代理机构 代理人
主权项 1. A light-emitting diode, comprising: a substrate; a stacked semiconductor structure disposed on the substrate; at least one contact electrode electrically coupled with the stacked semiconductor structure; and at least one light-guiding structure comprising at least two inclined opposite sidewalls, and the light-guiding structure disposed between the contact electrode and the stacked semiconductor structure, wherein at least part of light emitted from the stacked semiconductor structure can be redirected to escape from at least one of the inclined opposite sidewalls.
地址 Tao-Yuan Hsien TW