SIC-BASED TRENCH-TYPE SCHOTTKY DEVICE

摘要

A SiC-based trench-type Schottky device is disclosed. The device includes: a SiC substrate having first and second surfaces; a first contact metal formed on the second surface and configured for forming an ohmic contact on the substrate; a drift layer formed on the first surface and including a cell region and a termination region enclosing the cell region; a plurality of first trenches with a first depth formed in the cell region; a plurality of second trenches with a second depth less than the first depth; a plurality of mesas formed in the substrate, each defined between neighboring ones of the trenches; an insulating layer formed on sidewalls and bottoms of the trenches; and a second contact metal formed on the mesas and the insulating layer, extending from the cell region to the termination region, and configured for forming a Schottky contact on the mesas of the substrate.

主权项

1. A SiC-based trench-type Schottky device, comprising:
a SiC substrate having a first surface and an opposing second surface; a first contact metal formed on the second surface of the SiC substrate and configured for forming an ohmic contact between the first contact metal and the SiC substrate; a SiC drift layer formed on the first surface of the SiC substrate and including a cell region and a termination region enclosing the cell region; a plurality of first spaced trenches with a first depth formed in the cell region; a plurality of second spaced trenches with a second depth formed in the termination region, wherein the second depth is less than the first depth; a plurality of mesas formed in the SiC drift layer, each defined between neighboring ones of the first and the second spaced trenches; an insulating layer formed on sidewalls and bottoms of the first and the second spaced trenches; and a second contact metal formed on the mesas and the insulating layer, extending from the cell region to the termination region, and configured for forming a Schottky contact between the second contact metal and the mesas of the SiC substrate.