发明名称 |
THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF |
摘要 |
A thin film transistor array panel includes a substrate, an insulation layer, a first semiconductor, and a second semiconductor. The insulation layer is disposed on the substrate and includes a stepped portion. The first semiconductor is disposed on the insulation layer. The second semiconductor is disposed on the insulation layer and includes a semiconductor material different than the first semiconductor. The stepped portion is spaced apart from an edge of the first semiconductor. |
申请公布号 |
US2014175441(A1) |
申请公布日期 |
2014.06.26 |
申请号 |
US201313927781 |
申请日期 |
2013.06.26 |
申请人 |
Samsung Display Co., Ltd. |
发明人 |
CHIN Hong-Kee;Yeo Yun Jong;Kim Sang Gab;Bang Jung-Suk;Cho Byeong Hoon |
分类号 |
H01L27/12 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a thin film transistor array panel, comprising:
forming a first insulation layer on a substrate; forming a first semiconductor material layer on the first insulation layer; forming an etching passivation material layer on the first semiconductor material layer; forming a first photoresist layer on the etching passivation material layer; etching, using the first photoresist layer as a mask, the etching passivation material layer to form an etching passivation layer; etching, using the first photoresist layer as a mask, the first semiconductor material layer to form a first semiconductor pattern comprising a protrusion not covered by the etching passivation layer; forming, sequentially, a second insulation layer and a second semiconductor material layer on the etching passivation layer and the first semiconductor pattern; forming a second photoresist layer on the second semiconductor material layer; etching, using the second photoresist layer as a mask, the second semiconductor material layer to form a first semiconductor; etching the first insulation layer not covered by the second photoresist layer and the protrusion not covered by the etching passivation layer to form a second semiconductor comprising an undercut region under the etching passivation layer; and forming, in the first insulation layer, a stepped portion spaced apart from an edge of the second semiconductor. |
地址 |
Yongin-City KR |