发明名称 |
Morphology control of ultra-thin MeOx layer |
摘要 |
A nonvolatile memory device contains a resistive switching memory element with improved device switching performance and life and methods for forming the same. The nonvolatile memory device has a first layer on a substrate, a resistive switching layer on the first layer, and a second layer. The resistive switching layer is disposed between the first layer and the second layer and the resistive switching layer comprises a material having the same morphology as the top surface of the first layer. A method of forming a nonvolatile memory element in a ReRAM device includes forming a resistive switching layer on a first layer and forming a second layer, so that the resistive switching layer is disposed between the first layer and the second layer. The resistive switching layer comprises a material formed with the same morphology as the top surface of the first layer. |
申请公布号 |
US2014175357(A1) |
申请公布日期 |
2014.06.26 |
申请号 |
US201213724126 |
申请日期 |
2012.12.21 |
申请人 |
INTERMOLECULAR INC. ;KABUSHIKI KAISHA TOSHIBA ;SANDISK 3D LLC |
发明人 |
Nardi Federico;Wang Yun |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
1. A nonvolatile memory element, comprising:
a first layer on a substrate; a resistive switching layer on the first layer; and a second layer; wherein the resistive switching layer is disposed between the first layer and the second layer, and wherein the resistive switching layer comprises a material having the same morphology as a top surface of the first layer. |
地址 |
San Jose CA US |