发明名称 Resistive Random Access Memory Access Cells Having Thermally Isolating Structures
摘要 Provided are resistive random access memory (ReRAM) cells including resistive switching layers and thermally isolating structures for limiting heat dissipation from the switching layers during operation. Thermally isolating structures may be positioned within a stack or adjacent to the stack. For example, a stack may include one or two thermally isolating structures. A thermally isolating structure may directly interface with a switching layer or may be separated by, for example, an electrode. Thermally isolating structures may be formed from materials having a thermal conductivity of less than 1 W/m*K, such as porous silica and mesoporous titanium oxide. A thermally isolating structure positioned in series with a switching layer generally has a resistance less than the low resistance state of the switching layer. A thermally isolating structure positioned adjacent to a switching layer may have a resistance greater than the high resistance state of the switching layer.
申请公布号 US2014175356(A1) 申请公布日期 2014.06.26
申请号 US201213721658 申请日期 2012.12.20
申请人 INTERMOLECULAR INC. ;KABUSHIKI KAISHA TOSHIBA ;SANDISK 3D LLC 发明人 Wang Yun;Chiang Tony P.;Minvielle Tim;Yamaguchi Takeshi
分类号 H01L45/00 主分类号 H01L45/00
代理机构 代理人
主权项 1. A resistive random memory access cell comprising: a first layer comprising a metal oxide having at least two resistive states; and a second layer comprising a first thermally isolating material having a thermal conductivity of less than 1 W/m*K, wherein the second layer is porous.
地址 San Jose CA US