INTERDIGITATED ELECTRODE FORMATION

摘要

The disclosed technology generally relates to photovoltaic devices and methods of fabricating photovoltaic devices, and more particularly relates to interdigitated back contact photovoltaic cells and methods of fabricating the same. In one aspect, a method of forming first and second interdigitated electrodes on a semiconductor substrate comprises providing a dielectric layer on the rear surface of the semiconductor substrate. The method additionally comprises providing a metal seed layer on the dielectric layer. The method additionally comprises patterning the metal seed layer by laser ablation, thereby separating it into a first seed layer and a second seed layer with a separation region interposed therebetween, wherein the first seed layer and the second seed layer are interdigitated and electrically isolated from each other. The method further comprises thickening the first seed layer and the second seed layer by plating, thereby forming the first electrode and the second electrode.

主权项

1. A method of forming a first electrode and a second electrode on a semiconductor substrate, the first electrode and the second electrode being interdigitated, the method comprising:
providing a dielectric layer on a surface of the semiconductor substrate; providing a metal seed layer on the dielectric layer; patterning the metal seed layer by laser ablation, thereby separating the metal seed layer into a first seed layer and a second seed layer interposed by a separation region formed therebetween, wherein the first seed layer and the second seed layer are interdigitated and electrically isolated from each other; and thickening the first seed layer and the second seed layer by plating, thereby forming the first electrode and the second electrode, wherein before thickening of the first seed layer and the second seed layer, the dielectric layer is partially removed from the separation region.