LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF

摘要

Provided are a light emitting diode (LED) having a transparent conductive layer, and manufacturing method thereof, the LED comprising: a substrate (101); a luminous epitaxial layer formed of semiconductor materials and formed on the substrate (101) by sequentially stacking from the bottom to the top a first limit layer (102), a luminous layer (103), and a second limit layer (104); a current barrier layer (105) formed on a local area of the luminous epitaxial layer; a transparent conductive structure (106, 107) formed on the current barrier layer (105) and extending to the surface of the luminous epitaxial layer, and divided into a light outlet region and a non-light outlet region, the non-light outlet region corresponding to the current barrier layer (105), and being thicker than the light outlet region, thus forming good ohmic contact between the transparent conductive structure (106, 107) and the luminous epitaxial layer, and reducing light absorption; and a P electrode formed on the non-light outlet region of the transparent conductive structure (106, 107). The transparent conductive structure (106, 107) ensures current scalability, lowers working voltage, and reduces light absorption.