发明名称 |
Method of Manufacturing a Bipolar Transistor and Bipolar Transistor |
摘要 |
<p>Disclosed is a method of manufacturing a bipolar transistor comprising providing a substrate (10) including an active region (22); depositing a layer stack; forming a base window (38) over the active region in said layer stack; forming at least one pillar (40) in the base window, wherein a part of the pillar is resistant to polishing; depositing an emitter material (46) over the resultant structure, thereby filling said base window; and planarizing the deposited emitter material by polishing. A bipolar transistor manufactured in accordance with this method is also disclosed.</p> |
申请公布号 |
EP2458623(B1) |
申请公布日期 |
2014.06.25 |
申请号 |
EP20100192803 |
申请日期 |
2010.11.26 |
申请人 |
NXP B.V. |
发明人 |
GRIDELET, EVELYNE;VANHOUCKE, TONY;DONKERS, JOHANNES JOSEPHUS THEODORUS;MERTENS, HANS;DURIEZ, BLANDINE |
分类号 |
H01L21/331;H01L21/8249;H01L29/08;H01L29/10;H01L29/732 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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