发明名称 Method of Manufacturing a Bipolar Transistor and Bipolar Transistor
摘要 <p>Disclosed is a method of manufacturing a bipolar transistor comprising providing a substrate (10) including an active region (22); depositing a layer stack; forming a base window (38) over the active region in said layer stack; forming at least one pillar (40) in the base window, wherein a part of the pillar is resistant to polishing; depositing an emitter material (46) over the resultant structure, thereby filling said base window; and planarizing the deposited emitter material by polishing. A bipolar transistor manufactured in accordance with this method is also disclosed.</p>
申请公布号 EP2458623(B1) 申请公布日期 2014.06.25
申请号 EP20100192803 申请日期 2010.11.26
申请人 NXP B.V. 发明人 GRIDELET, EVELYNE;VANHOUCKE, TONY;DONKERS, JOHANNES JOSEPHUS THEODORUS;MERTENS, HANS;DURIEZ, BLANDINE
分类号 H01L21/331;H01L21/8249;H01L29/08;H01L29/10;H01L29/732 主分类号 H01L21/331
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