发明名称 REFRESH CONTROL CIRCUIT OF A SEMICONDUCTOR MEMORY APPARATUS
摘要 According to the present invention, a refresh control circuit of a semiconductor memory device includes: a refresh mode defining unit which outputs a refresh mode signal in response to an external input; an automatic speed switching unit which outputs a high speed enable signal with a constant pattern in response to a refresh signal and the refresh mode signal; and a refresh control unit which controls the number of refreshed memory cells per one refresh command according to the high speed enable signal in response to the refresh command once or more times and outputs the refresh signal.
申请公布号 KR20140078286(A) 申请公布日期 2014.06.25
申请号 KR20120147493 申请日期 2012.12.17
申请人 SK HYNIX INC. 发明人 MOON, IN JUN;DO, CHANG HO
分类号 G11C11/406 主分类号 G11C11/406
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