| 摘要 |
<p>A semiconductor device includes a channel layer; memory cells which include a control gate surrounding the channel layer and a first memory layer interposed between the channel layer and the control gate; and at least one selection transistor which includes a selection gate surrounding the channel layer, a tunnel insulating layer interposed between the channel layer and the selection gate, and a buffer layer, and is formed in the upper part or the lower part of the memory cells.</p> |
