MANUFACTURING METHOD FOR SURFACE TEXTURING OF A LIGHT-EMITTING DIODE AND LIGHT-EMITTING DIODE THEREBY

摘要

The present invention relates to a method for forming surface unevenness of a semiconductor light emitting diode, capable of improving light extraction efficiency by forming surface unevenness. The method for forming surface unevenness of a semiconductor light emitting diode according to the present invention includes the steps of: forming a resist layer on an upper layer of a semiconductor thin film; performing an imprinting process; performing a dry etching process and a wet etching process; and performing surface texturing of the semiconductor thin film, or includes the steps of: forming a resist layer on an upper layer of a semiconductor thin film; patterning the resist layer by a KrF stepper/scanner or an i-line stepper/i-line scanner; performing a dry etching process and a wet etching process; and performing surface texturing of the semiconductor thin film. According to the present invention, the method can remarkably reproduce to form the surface unevenness, and the surface of the semiconductor thin film is deeply etched to have uniform roughness in the large area. Therefore, the semiconductor thin film can have the maximized surface area, thereby improving optical extraction efficiency of a light emitting diode.