发明名称 |
Interface engineering to optimize metal-III-V contacts |
摘要 |
<p>Techniques for fabricating self-aligned contacts in III-V FET devices are provided. In one aspect, a method for fabricating a self-aligned contact to III-V materials includes the following steps. At least one metal is deposited on a surface of the III-V material. The at least one metal is reacted with an upper portion of the III-V material to form a metal-III-V alloy layer which is the self-aligned contact. An etch is used to remove any unreacted portions of the at least one metal. At least one impurity is implanted into the metal-III-V alloy layer. The at least one impurity implanted into the metal-III-V alloy layer is diffused to an interface between the metal-III-V alloy layer and the III-V material thereunder to reduce a contact resistance of the self-aligned contact.</p> |
申请公布号 |
GB2499318(B) |
申请公布日期 |
2014.06.25 |
申请号 |
GB20130002000 |
申请日期 |
2013.02.05 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ZHEN ZHANG;YANNING SUN;PAUL MICHAEL SOLOMON;CHRISTIAN LAVOIE;UZMA RANA;KUEN-TING SHIU;DEVENDRA K SADANA |
分类号 |
H01L21/24;H01L21/18;H01L21/441;H01L29/08;H01L29/66 |
主分类号 |
H01L21/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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