| 摘要 |
An embodiment of the present invention relates to a method of fabricating a semiconductor device having a through-silicon via and a semiconductor device thereof. An objective of the present invention is to provide a method of fabricating a semiconductor device having a through-silicon via and a semiconductor device thereof, wherein the semiconductor device is obtained by further forming a stress compensation layer on a surface of a wafer after the backside of the wafer is ground so that a wafer bending phenomenon can be prevented. To this end, the present invention provides a method of fabricating a semiconductor device and a semiconductor device thereof. The method of fabricating the semiconductor device includes the steps of providing a wafer composed of a semiconductor die having a flat first surface and a second surface opposite to the first surface, and a plurality of first conductive patterns formed on the first surface; forming a hole formed to pass through a first conductive pattern toward the second surface of the semiconductor die; forming an insulating layer and a seed layer on an inner wall of the hole, and a through-silicon via on the seed layer; allowing a first surface of the wafer to adhere to a handling carrier by interposing a temporary adhesion layer between the first surface of the wafer and the handling carrier; exposing the through-silicon via by grinding a second surface of the wafer; forming a stress compensation layer on a surface of the ground wafer and the through-silicon via; forming a protective layer on the stress compensation layer; and removing the stress compensation layer and the protective layer corresponding to the through-silicon via, and forming a second conductive pattern to be in electrical contact with the through-silicon via. |
