发明名称
摘要 Producing a single crystal (1) by zone floating, comprises crystallizing the single crystal using an induction heating coil under a melting zone at a crystallization boundary (2), hindering the emission of crystallization heat by a reflector surrounding the single crystal. The single crystal is heated in a region of an outer edge of the crystallization boundary in a first zone using a heating device (6), during which a distance between an outer triple point at the outer edge of the crystallization boundary, and a center of the crystallization boundary is affected. An independent claim is also included for an apparatus for producing the single crystal by zone floating, comprising a reflector surrounding the single crystal, and a heating device for heating the single crystal.
申请公布号 JP5531085(B2) 申请公布日期 2014.06.25
申请号 JP20120276788 申请日期 2012.12.19
申请人 发明人
分类号 C30B13/30;C30B13/08;C30B29/06 主分类号 C30B13/30
代理机构 代理人
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