发明名称
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a reflection type mask and a method of manufacturing the same which can maintain transfer characteristics even if contamination cleaning is carried out, and can suitably correct a white defect. <P>SOLUTION: The reflection type mask includes a substrate, a multilayered film formed on the substrate, and an absorbing layer formed on the multilayered film in a pattern. The reflection type mask includes a pattern which has an absorbing region where the absorbing layer is formed on the multilayered film, a reflection region where the absorbing layer is not formed on the multilayered film, and a white defect correction region where the multilayered film positioned in a white defect part caused by the lack of the absorbing layer is removed, and in which the absorbing region and the white defect correction region are adjacent. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP5533016(B2) 申请公布日期 2014.06.25
申请号 JP20100039148 申请日期 2010.02.24
申请人 发明人
分类号 G03F1/74;G03F1/22;G03F1/24;G03F1/72;H01L21/027 主分类号 G03F1/74
代理机构 代理人
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