| 摘要 |
<p>A solid-state imaging device including unit pixel cells, each having a photoelectric conversion film and a pixel electrode which are formed above a silicon substrate, an amplification transistor which is formed on the silicon substrate and outputs a voltage according to a potential of the pixel electrode, and a reset transistor which is formed on the silicon substrate and resets a potential of a gate electrode of the amplification transistor, the imaging device including a vertical signal line which is disposed correspondingly to a column of the unit pixel cells, and transmits a voltage of the unit pixel cells of the corresponding column, and a vertical scanning unit which selects a row of the unit pixel cells having a voltage to be outputted to the vertical signal line, wherein the vertical signal line is located below the pixel electrode of the unit pixel cells corresponding to the vertical signal line.</p> |
