| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor devices, the method ensuring a high breakdown voltage-yield rate, reducing a unit area on-resistance, and reducing a chip size even without a high breakdown voltage design drastically higher than an aimed rated breakdown-voltage value by anticipating a decrease in a breakdown voltage in the semiconductor device having a super junction structure. SOLUTION: Elements that can be converted to donors, such as oxygen, hydrogen, and nitrogen, are previously doped into a super junction structure region where pn columns is formed, the amount of impurity in the p-type column is set to be more excessive than the amount of impurity in the n-type column, and the oxygen, hydrogen, nitrogen, and the like are converted to donors such that the ratio of the amount of impurity between the p-type column and the n-type column becomes nearly equal after measuring breakdown voltages. COPYRIGHT: (C)2011,JPO&INPIT |
