| 摘要 |
An objective of the present invention is to provide an indium zinc oxide semiconductor ink composition for making a spontaneous combustion reaction and an inorganic semiconductor film fabricated using the same. To this end, the semiconductor ink composition according to the present invention includes a nitrate of metal A serving as an oxide material and a complex of metal B serving as a fuel material, which is expressed through chemical formula 1. Each of the metal A and the metal B includes one selected from the group consisting of indium, gallium, zinc, titanium, aluminum, lithium, and zirconium. The metal A and the metal B are different from each other. The indium zinc oxide semiconductor ink composition for making the spontaneous combustion reaction and the inorganic semiconductor film fabricated using the same according to the present invention can be used as a channel material of a transistor device, so that an inorganic thin film transistor having superior electric performance can be fabricated. In addition, the composition is appropriate to a solution process to make it easy to fabricate the thin film, and a low-temperature process is possible. Through the spontaneous combustion reaction caused by mixing metallic precursors, in which the fuel material and the oxide material are coordinated, are mixed, dense and uniform thin films can be fabricated. Accordingly, the inorganic thin film transistor having superior reliability can be fabricated. |
