发明名称 |
THIN-FILM FORMATION METHOD and THIN-FILM FORMATION DEVICE |
摘要 |
<p>Abstract: [Problem] To provide a means for forming a thin-film in a desired part of an object to be treated. [Solution] The thin-film formation means according to the present invention is part of a thin-film formation method which supplies electricity to a raw-material gas in a reduced pressure container, converting the raw-material gas to plasma, and irradiates the plasma, thus forming a thin-film on the surface of an object to be treated. Therein, the effect of a magnetic field generated by a magnetic field generating means is used to form the thin-film in a desired part. The effect of the magnetic field focuses the flux of the plasma in a desired part of the surface of the object to be treated, thus enabling the thin-film to be formed in the desired part.</p> |
申请公布号 |
EP2746425(A1) |
申请公布日期 |
2014.06.25 |
申请号 |
EP20120833526 |
申请日期 |
2012.09.20 |
申请人 |
SHIBAURA INSTITUTE OF TECHNOLOGY |
发明人 |
AIZAWA, TATSUHIKO;MORITA, HIROSHI;KUROSUMI, SHUICHI |
分类号 |
C23C14/35;C23C14/04;C23C16/04;C23C16/27;C23C16/455;C23C16/458;C23C16/505 |
主分类号 |
C23C14/35 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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