PLASMA CVD APPARATUS

摘要

The present invention relates to a plasma chemical vapor deposition (CVD) apparatus which carries out a series of plasma chemical vapor deposition processes on the surface of a substrate. The plasma CVD apparatus comprises: a chamber having a vacuum space; a vacuum regulating part to regulate the degree of vacuum for a vacuum space; a gas supplying part to supply gas for the corresponding process inside the vacuum space; a plurality of round electrodes which are arranged in intervals from one another to be able to rotate inside the vacuum space and on which the substrate is wound; a plurality of guide rolls which are arranged on one side of the round electrodes in intervals from one another to be able to rotate and on which the substrate is selectively wound around the guide rolls or not wound around the guide rolls when the process relative to the substrate is a process relative to one side of the substrate or relative to both sides of the substrate; a magnetic field generating member mounted inside the round electrode to be able to regulate a rotation angle in order to generate a magnetic field to form a plasma toward the substrate which is wound around the round electrode; and a power supply part to supply electric power to each round electrode. The plasma chemical vapor deposition apparatus can selectively carry out deposition, etching or surface treatment on one side or on both sides of the substrate and minimize the increase in size and manufacturing costs of the apparatus.