发明名称 Templates for the lateral overgrowth at least one group III nitride based layer
摘要 <p>Template (10) for lateral overgrowth of at least one group-III nitride-based layer along a first direction, which is structured at least in a partial region by recesses (20) extending in the first direction and are separated by approximately parallel webs (30), is claimed. Epitaxy is a method for the lateral growth of a group iii-nitride layer on structured templates. The webs mainly extend in the first direction and are arranged one behind the other in a second direction perpendicular to the first direction. The structured portion of connecting webs (41) connects the parallel webs with each other.</p>
申请公布号 EP2747127(A1) 申请公布日期 2014.06.25
申请号 EP20130198088 申请日期 2013.12.18
申请人 FORSCHUNGSVERBUND BERLIN E.V. 发明人 WEYERS, MARKUS;KNEISSL, MICHAEL;KÜLLER, VIOLA;EINFELDT, SVEN;KNAUER, ARNE
分类号 H01L21/20 主分类号 H01L21/20
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