| 摘要 |
<p>The invention provides a patterning process which uses self-assembly, comprises: a step of forming a silicon-containing film by applying a silicon-containing film composition having an organic substituent group substituted with an acid labile group onto a substrate to be processed, a step of forming a photoresist film onto the silicon-containing film, a step of patter-exposing of the photoresist film, a step of removing the photoresist film, a step of forming a polymer film by applying a self-assembling polymer onto the silicon-containing film, a step of self-assembling the polymer film to form a microdomain structure, a step of forming a pattern of the polymer film having the microdomain formed, a step of transferring the pattern to the silicon-containing film by using the pattern formed on the polymer as a mask, and a step of transferring the pattern to the substrate to be processed by using the pattern transferred to the silicon-containing film as a mask. There can be provided a pattern having a microdomain structure formed by self-assembly with excellent uniformity and regularity, the pattern having been difficult to be obtained by a conventional self-assembling polymer.
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