REACTION CHAMBER FOR DEPOSITION OF A SEMICONDUCTOR LAYER ON THE PLURALITY SUBSTRATES IN BATCHES

摘要

A reaction chamber for deposition of a semiconductor layer or layer structure on the plurality of substrate surfaces in substrate batches wherein the chamber comprises a body with an inner volume and a closing bottom lid, in the inner volume rectangular substrates are aranged spaced apart from each other and electrodes suitable for providing high-frequency electromagnetic field are disposed between the substrates; and the space presenting between the surfaces to be deposited provide flow channels making available the laminar flow of reaction gases between two opposite sides of the chamber, and the chamber is characterized in that the closing bottom lid can be opened in the vertical up-and-down direction, and the lid comprises supporting frames for holding the substrates from the bottom and along the side edges, and the supporting frames are provided with adequate recesses to enable them to perform this supporting function.