Method for producing at least one silicon nanoelement in a silicon oxide wafer, method for manufacturing a device using said production method

摘要

The method involves providing a substrate including a surface layer (1) having electrically doped polycrystalline silicon. Another surface layer (2) containing silicon oxide with carbon atoms (3) is formed on the former surface layer. The layers are exposed in an oxidizing atmosphere, so as to oxidize a wafer (1a) of the former layer at an interface of the layers, and a nanowire (4) is formed at the wafer of the former layer. A desired concentration of a doping agent in the former layer is determined before doping, so as to obtain a predetermined density of the nanowire. An independent claim is also included for a method for manufacturing an electronic device provided with a functionalized nanowire.