发明名称 Simulation of the effects of shot noise in a particle beam lithography method, in particular electron beam lithography
摘要 <p>The method involves depositing particles on a surface of a sample in a preset pattern by a beam of the particles, where the pattern is subdivided into pixels and a nominal dose of particles is associated with each of the pixels. A map (sigmad) of standard deviation in the normalized dose actually deposited in each of the pixels is calculated from a map (Mo) of the nominal dose associated with each pixel and a point spread function (PSF) characterizing the process, where the method is implemented by computer. Independent claims are also included for the following: (1) a computer program product for implementing a method simulating shot-noise effects in a particle-beam lithography process (2) and a computer programmed to implement a method for simulating shot-noise effects in a particle-beam lithography process.</p>
申请公布号 EP2746851(A2) 申请公布日期 2014.06.25
申请号 EP20130195869 申请日期 2013.12.05
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES;ASELTA NANOGRAPHICS 发明人 BELLEDENT, JÉRÔME
分类号 G03F7/20 主分类号 G03F7/20
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